Furukawa Electric Reduces Raman Amplifier Power Consumption with New Dual Port Raman Pump

　　Tokyo, Japan – March 28, 2025 – Furukawa Electric Co., Ltd. (Head Office: 2-6-4 Otemachi, Chiyoda-ku, Tokyo; President: Hideya Moridaira) has successfully reduced power consumption in Raman amplifiers with its newly developed Dual Port Raman Pump Laser (DPRP). This high-output, low-power solution cuts energy use by 32-39% compared to existing products, enhancing efficiency in optical communication networks.

　　Addressing Growing Data Demands

　　As data traffic surges due to AI, machine learning, and high-speed communication, network infrastructure must support longer transmission distances without compromising signal quality. Raman amplifiers play a crucial role by strengthening optical signals while preserving integrity.

　　With increasing demand for high-speed transmission, amplifiers must now support wider bandwidths across the S-, C-, and L-bands. This expansion requires more pump lasers, making energy-efficient, high-output solutions essential.

　　Innovative DPRP Technology

　　Furukawa Electric’s Dual Port Raman Pump Laser (DPRP) integrates two laser chips into a single package, reducing the total number of required pump lasers while improving efficiency. Key benefits include:

　　Lower Power Consumption – Reduces total energy use by leveraging efficient cooling mechanisms.

　　Optimized Heat Management – Minimizes thermal load for better Thermoelectric Cooler (TEC) performance.

　　Compact & High-Performance Design – Uses high accuracy fiber coupling technology and Indium Phosphide (InP) semiconductor laser chip structure for low-loss, high-efficiency.

　　Power Efficiency Comparison

　　Furukawa Electric’s Dual Port Raman Pump Laser (DPRP) integrates two laser chips into a single package, reducing the total number of required pump lasers while improving efficiency. Key benefits include:

　　Furukawa Electric’s DPRP technology builds on 25 years of fiber coupling and semiconductor expertise, delivering high-efficiency Raman amplification (patented, note 3) for next-generation optical networks.

　　Market Availability & Future Development

　　Samples began shipping in November 2024.

　　Continued development of next-generation low-power laser technologies to further enhance energy efficiency.

　　(note 1) OSNR (Optical Signal to Noise Ratio): Parameter that indicates the signal-to-noise ratio

　　(note 2) InP (Indium Phosphide): A III-V compound semiconductor that is used for the manufacture of laser diode chips and high-speed transistors

　　(note 3) US patent US 9,083,150 B2

　　The current development was conducted and achieved as part of the National Institute of Information and Communications Technology (NICT) commissioned research “Beyond 5G – Development of extended range optical node technology for realizing ultra-high speed, large volume networks” (Key Issue JPJ012368C04501) and the 2024 Function Realization and International joint R&D Program “Innovative ICT Fund Projects for Beyond 5G/6G” (JPJ012368G60101).

　　Commitment to Sustainability

　　Furukawa Electric Group is committed to the United Nations Sustainable Development Goals (SDGs). Through Vision 2030, the company is working to integrate information, energy, and mobility solutions for a more sustainable world. This breakthrough in Raman amplifier technology supports our goal of reducing environmental impact and creating a greener communications infrastructure.

　　For more details on Furukawa Electric’s sustainability efforts, visit: https://furukawaelectric.disclosure.site/en/themes/182